Study on Heterophotocell Based on Super-line Photoventil Effect

The paper considers the superliner photovoltaic effect associated with the modification of heterojunctions of the pCu2S-nSi type by introducing a silicon nanocluster subsystem into it at the junction boundary. The design of a photocell containing two sequentially articulated p-n junctions of counter action, photoactive in different regions of the spectrum, is proposed. We show that film heterojunctions, which include a nanocluster subsystem, have a difference from the non-clustered version. Heterophotocells without nanocluster subsystem always have sublinear, or, in rare cases, linear lux-ampere characteristics (up to illumination 5 104 lx), while because of introducing nanocluster centers into the base p-region of the Cu2S-Si heterojunctions, a significantly higher integral sensitivity is achieved at high illumination of the samples in the mode of a valve photocell. At an increase in the size of NC centers to hundreds and more angstroms, the photoeffect is not only not enhanced, but, on the contrary, completely disappears, giving way to a new effect of superlinearity of the lux-ampere characteristic. The discovered superliner photoeffect in a heterophotocell based on an NCS leads to an increase in the cell photosensitivity at high illumination.