Corrosion Resistance of Mo Capillary Porous Systems (CPSs) in High Temperature Liquid Sn through High-flux Hydrogen Plasmas Irradiated

Guo, Hengxin and Ye, Zongbiao and Yang, Li and Gao, Yingwei and Liu, Jianxing and Jing, Wenna and Wei, Jianjun and Chen, Shuwei and Chen, Bo and Chen, Jianjun and Wang, Hongbin and Gou, Fujun (2023) Corrosion Resistance of Mo Capillary Porous Systems (CPSs) in High Temperature Liquid Sn through High-flux Hydrogen Plasmas Irradiated. In: Current Innovations in Chemical and Materials Sciences Vol. 2. B P International, pp. 1-18. ISBN 978-81-966927-2-8

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Abstract

In this study, the corrosion resistance of Mo capillary porous systems (CPSs) in high temperature liquid Sn was examined in relation to hydrogen plasma irradiation. Capillary-Pore Systems (CPS) filled by liquid metals are considered as an alternative solution of materials choice for plasma facing component of tokamak reactor. Initial Mo CPSs showed a significant morphology change and mass loss rate (1.107 × 10–3 mg/(mm2·h)) after corrosion in liquid Sn at 1,023 K for 100 h. A brief period of irradiation enhanced the corrosion resistance of Mo wires, resulting in a dramatic decrease to 1.23 × 10–4 mg/(mm2·h) in mass loss rate under the same corrosion conditions. To determine whether temperature was the main factor leading to above phenomenon, Mo CPSs were pre-annealed at the same temperature (843 K) as irradiation. The mass loss rate of annealed Mo CPSs (3.09 × 10–4 mg/(mm2·h)), which was lower than that of the initial sample, was still higher than that of the plasma-treated samples. Difference between plasma irradiation and heat treatment was the incident of various particles in hydrogen plasma. Therefore, the suppressed corrosion phenomenon caused by plasma could not only be attributed to the function of high temperature but its synergistic effect with hydrogen isotope retention.

Item Type: Book Section
Subjects: Eurolib Press > Chemical Science
Depositing User: Managing Editor
Date Deposited: 02 Nov 2023 08:19
Last Modified: 02 Nov 2023 08:19
URI: http://info.submit4journal.com/id/eprint/2880

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